N-Docosylquinolinium-TCNQ LB 막 의 Iodine Doping에 의한 물리적 특성

A Physical Characteristics of the Iodine Doping of N-Docosylquinolinium-TCNQ Langmuir-Blodgett films

The present paper is devoted to the physical and electrical characteristics of N-docosyl- quinolinium-TCNQ films compared with the films doped with I$_2$. Iodine affects the degree of charge transfer and the conductivity of the films. The UV-visible absorption spectra of the film doped with I$_2$ shows that the peak of I$_3$ which had electronic transition at 300∼350nm and (TCNQ-)$_2$ dimer absorption disappered. The in-plane electrical conductivity of the films doped with I$_2$ were 1.4${\times}$10$\sub$-6/S/cm, which is two orders of magnitude higher conductivity than undoped LB films. The film structural difference between Y and Z-type may cause the conductivity. Another possible reasons of the structural difference was the overlapping TCNQ anion radical in LB films.