Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

The resistivity properties of tungsten nitride films deposited by RF and DC sputtering

RF와 DC 스퍼터링에 의한 질화 텅스텐 박막의 비저항 특성

  • 이우선 (조선대학교 공과대학 전기공학과) ;
  • 정용호 (조선대학교 공과대학 전기공학과) ;
  • 유병수 (조선대학교 공과대학 전기공학과) ;
  • 김남오 (조선대학교 공과대학 전기공학과)
  • Published : 1994.11.01

⟨ Previous Next ⟩

Abstract

Tungsten and Tungsten Nitride thin films deposited by RF and DC sputtering and the resistivity of these films was measured. We deposited tungsten and tungsten nitride films by RF and DC sputtering at various conditions and derived equations that determines the resistivity and sheet resistivity by stabilizing the basic theory. We investigated properties of the resistivity and sheet resistivity of theme films under various conditions like temperature of substrate, flow rate of the argon gas and content of nitrogen from nitrogen-argon mixtures

Keywords