대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

As-Ge-Te계 박막의 스위칭 특성

Switching Characteristics of As-Ge-Te Thin Film

  • 천석표 (광운대학교 전자재료공학과) ;
  • 이현용 (광운대학교 전자재료공학과) ;
  • 박태성 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과) ;
  • 이영종 (여주전문대학교 전자과)
  • Chean, S.P. (Dept. of Electronic Material Eng., Kwangwoon Univ.) ;
  • Lee, H.Y. (Dept. of Electronic Material Eng., Kwangwoon Univ.) ;
  • Park, T.S. (Dept. of Electronic Material Eng., Kwangwoon Univ.) ;
  • Chung, H.B. (Dept. of Electronic Material Eng., Kwangwoon Univ.) ;
  • Lee, Y.J. (Electronic Eng., Yeoju J. College)
  • 발행 : 1994.11.18
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

The switching characteristics of $As_{10}Ge_{15}Te_{75}$ thin film were investigated under dc bias. It was found that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively. The threshold voltage is increased as the thickness and the electrode distance is increased, while the threshold voltage is decreased in proportion to the increased annealing time and temperature.

키워드