대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1994년도 추계학술대회 논문집 학회본부
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- Pages.249-251
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- 1994
Spectroscopic Ellipsometer를 이용한 삼원 SiO박막의 유전율특성
The Dielectric Properties by Triple SiO Thin Film using Spectroscopic Ellipsometer
- Kim, Byeung-In (Song Won College) ;
- Lee, Woo-Sun (Cho Sun Univ) ;
- Kim, Chang-Suk (Cho Sun Univ) ;
- Lee, Suang-Il (Cho Sun Univ) ;
- Hwang, Seuk-Yong (Dan Kook Univ)
- 발행 : 1994.11.18
초록
We fabricated the sample of M-I-M with the insulating layer SiO. Refractive index of wave length, photon energy, absorption rate of SiO evaporation thin film are experimentally examined by spectroscopic Ellipsometer. The calculated equations of refractive index, absorption rate and permittivity of SiO thin film are induced. Calculated values and experimental values are compared and then mutual validity is proved.
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