TWO DIMENSIONAL NUMERICAL SIMULATION PROGRAM FOR HYDROGENATED AMORPHOUS SILICON THIN FILM TRANSISTORS

A non-uniform finite-difference Thin Film Transistor Simulation Program (TFTSP) has been developed for hydrogenated amorphous silicon TFTs. TFTSP was developed to remove as many of simplifying assumptions as possible and to provide flexibility in the modeling of TFTs so that different model assumptions may be analyzed and compared. In order to insure its usefulness and versatility as an analytic and design tool it is important for the code to satisfy a number of conditions. However, at the beginning stage of the program development, this paper shows that the code can compute the static terminal characteristics of a-Si:H TFTs under a wide range of bias conditions to allow for comparison of the model with experiment. Some of those comparisons include transfer characteristics and I-V characteristics. TFTSP will be refined to conveniently model the performances of TFTs of different designs and to analyze many anomalous behaviors and factors of a-Si:H TFTs.