Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1995.07c
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- Pages.1069-1071
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- 1995
The Electrical properties of Al/TiN/Ti Contact at Submicron contact(2)
Al/TiN/Ti 전극의 Submicron contact에서의 전기적특성(2)
-
Lee, C.J.
(Kunsan National Univ.)
;
- Eum, M.J. (Kunsan National Univ.) ;
- Ra, Y.C. (Kunsan National Univ.) ;
- Kim, S.J. (Kyungnam Univ.) ;
- Sung, M.Y. (Korea Univ.) ;
- Sung, Y.K. (Korea Univ.)
-
이철진
(군산대 전기공학과)
;
- 엄문종 (군산대 전기공학과) ;
- 라용춘 (군산대 전기공학과) ;
- 김성진 (경남대 전자공학과) ;
- 성만영 (고려대 전기공학과) ;
- 성영권 (고려대 전기공학과)
- Published : 1995.07.20
Abstract
The electrical properties of Al/TiN/Ti contact are investigated at submicron contacts. The contact resistance and contact leakage current are dependent on metallization, surface dopant concentration, semiconductor surface treatment and contact plug ion implantation. In this paper, the contact resistance and contact leakage current are studied according to surface dopant concentration, semiconductor surface treatment and contact plug ion implantation at 0.8 micron contact. The contact resistance and contact leakage current increases with increasing substrate ion concentration. HF cleaning represents high contact resistance but low contact leakage current while CDE cleaning represents low contact resistance but high contact leakage current. Contact plug ion implantation decreases contact resistance but increases contact leakage current. Specially, RTA represents good electrical properties.
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