Gold-Doped Double Injection Magnetic Sensor

금을 도우핑한 이중 주입 자기 센서

This paper reports some results of an experimental investigation of planar double injection magnetic sensors. The threshold voltage proved to be very sensitive to an applied magnetic field. The magnitude and direction of the threshold voltage variation depends on the field strength and its orientation with respect to the conduction chennel. The positively-directed field pushes the carriers into the bulk causing an increase in the threhold voltage. These results seem to agree with a path modulation due to Lorentz force. The application of a negative field causes a negative variation, which is dependent on the surface recombination velocity of the silicon-$SiO_2$ interface.