A robust controller design for rapid thermal processing in semiconductor manufacturing

The problem of temperature control for rapid thermal processing (RTP) in semiconductor manufacturing is discussed in this paper. Among sub=micron technologies for VLSI devices, reducing the junction depth of doped region is of great importance. This paper investigates existing methods for manufacturing wafers, focusing on the RPT which is considered to be good for formation of shallow junctions and performs the wafer fabrication operation in a single chamber of annealing, oxidation, chemical vapor deposition, etc., within a few minutes. In RTP for semiconductor manufacturing, accurate and uniform control of the wafer temperature is essential. In this paper, a robustr controller is designed using a recently developed optimization technique. The controller designed is then tested via computer simulation and compared with the other results.