Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical and Optical Characteristics of PLZT Thin Films in AFE region

AFE 영역 PLZT 박막의 전기 및 광학 특성

  • 류완균 (연세대학교 전기공학과) ;
  • 최형욱 (연세대학교 전기공학과) ;
  • 장낙원 (연세대학교 전기공학과) ;
  • 강종윤 (연세대학교 전기공학과) ;
  • 백동수 (연세대학교 전기공학과) ;
  • 박창엽 (연세대학교 전기공학과)
  • Published : 1995.11.01

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Abstract

In this study, PLZT thin films in AFE region prepared by sol-gel processing were investigated. And PLZT stock solutions were spin-coated on ITO-glass. The PLZT thin films were annealed by RTA. Hysteresis curves, dielectric characteristics and optical transmittances were measured in order to investigates the characteristics far the thin films. The PLZT thin films were crystallized at 750$^{\circ}C$ for 5 mimutes by RTA and the rosette structure composed of perovskite observed in the thin films. In case La content was 2/90/10 antiferroelectric-ferroelectric phase boundary was 2/90/10 PLZT thin film, and its hysteresis curve was good for application of optical information storage.

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