Effects of Mobility-Gap States on the Performance of a-Si:H Field-Effect Transistors

이동도갭 상태들의 수소화된 비결정 실리콘 전계효과 트랜지스터 성능에 대한 영향

An accurate and efficient single-integral semi-numerical model is developed and applied to analyse effects of localized electronic states in the mobility gap on the drain-current versus gale-voltage characteristics of hydrogenated amorphous field-effect transistors. It is shown that the low-density deep-gap states distributed in the midgap also sensitively and largely influence the device electronic performance as well as well as the large-density tail states distributed near the conduction band edge.