Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Formation and Characterization of SiOF films using Remote Plasma Enhanced Chemical Vapour Deposition

RPCVD를 이용한 SiOF박막의 형성 및 특성

  • 이상우 (청주대학교 반도체공학과) ;
  • 김제덕 (청주대학교 반도체공학과) ;
  • 김광호 (청주대학교 반도체공학과)
  • Published : 1995.11.01
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Abstract

The inter-metal dielectric SiOF films were fabricated using remote plasma-enhanced chemical vapour deposition with addition of SF$\sub$6/ gas. SiOF bond formation in these films was recognized by a chemical bonding structural study using FT-IR. The deposition rate and the dielectric constant of a deposited films were decreased with increasing SF$\sub$6/ gas. It was observed that leakage current of SiOF film was reduced the one order compared to a film without addtion of SF$\sub$6/ gas.

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