Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

Switching characteristics of the Scaled MONOS Nonvolatile Memory Devices

Scaled MONOS 비휘발성 기억소자의 스위칭 특성

  • 이상배 (광운대학교 전자재료공학과) ;
  • 김선주 (광운대학교 전자재료공학과) ;
  • 이성배 (광운대학교 전자재료공학과) ;
  • 강창수 (유한전문대 전자과) ;
  • 서광열 (광운대학교 전자재료공학과)
  • Published : 1995.05.01
Download PDF
⟨ Previous Next ⟩

Abstract

This study is to investigate the switching charac-teritics in the5V-programmable scaled MONOS nonvolatile memory devices, Modified Folwer-Nordheim tunneling mechanism become important when the electric field in the tunneling oxide is 6 MV/cm for E$\_$OT/ <6MV/cm the trap-assisted tunneling mechanism is dominant, The density of nitride bulk trap is found to be N$\_$T/=7.7${\times}$10$\^$18/ cm$\^$-3/ and the energy level of trap is determined to be ø$\_$T/=0.65 eV.

Keywords