Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1996.07c
- /
- Pages.1459-1461
- /
- 1996
The Characteristics of High Power AlGaAs/AlGaAs Infrared LED with DDH structure
DDH 구조를 갖는 고출력 AlGaAs/AlGaAs 적외선 LED소자의 특성
- Lee, Eun-Cheol (Dept. of Electrical Eng. Kunsan National Univ.) ;
- Ra, Yong-Choon (Dept. of Electrical Eng. Kunsan National Univ.) ;
- Eom, Moon-Jong (Dept. of Electrical Eng. Kunsan National Univ.) ;
-
Lee, Cheol-Jin
(Dept. of Electrical Eng. Kunsan National Univ.)
;
- Sung, Man-Young (Dept. of Electrical Eng. Korea Univ.) ;
- Sung, Yung-Kwon (Dept. of Electrical Eng. Korea Univ.)
- 이은철 (군산대학교 전기공학과) ;
- 라용춘 (군산대학교 전기공학과) ;
- 엄문종 (군산대학교 전기공학과) ;
-
이철진
(군산대학교 전기공학과)
;
- 성만영 (고려대학고 전기공학과) ;
- 성영권 (고려대학고 전기공학과)
- Published : 1996.07.22
Abstract
The optical and electrical properties of High Power AlGaAs/AlGaAs Infrared LED with DDH( Double power Double Hetero Junction) structure are investigated. The high power LED is recently studied in order to apply to high speed communication devices. The power out of AlGaAs/AlGaAs with DDH structure is 13.0[mW], the forward voltage is 1.45[V], and the average decrease rate of power out is about 5[%] after aging test. The optical and electrical properties of DDH structure LED are superior than that of SH structured LED. The DDH structured LED is suitable to the high speed communication devices.
Keywords