Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Experimental Analysis on the Anodic Bonding with Evaporated Glass Layer

  • Choi, Woo-Beom (Division of Electronics and Information Technology, Korea Institute of Science and Technology) ;
  • Ju, Byeong-Kwon (Division of Electronics and Information Technology, Korea Institute of Science and Technology) ;
  • Lee, Yun-Hi (Division of Electronics and Information Technology, Korea Institute of Science and Technology) ;
  • Jeong, Seong-Jae (Information Display Research Institute, Orion Electric Co.) ;
  • Lee, Nam-Yang (Information Display Research Institute, Orion Electric Co.) ;
  • Koh, Ken-Ha (Information Display Research Institute, Orion Electric Co.) ;
  • Haskard, M.R. (Microelectronics Centre, Univ. of South Australia) ;
  • Sung, Man-Young (Department of Electrical Engineering, Korea Univ.) ;
  • Oh, Myung-Hwan (Division of Electronics and Information Technology, Korea Institute of Science and Technology)
  • Published : 1996.07.22
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Abstract

We have performed silicon-to-silicon anodic bonding using glass layer deposited by electron beam evaporation. Wafers can be bonded at $135^{\circ}C$ with an applied voltage of $35V_{DC}$, which enables application of this technique to the vacuum packaging of microelectronic devices, because its bonding temperature and voltage are low. From the experimental results, we have found that the evaporated glass layer more than $1\;{\mu}$ m thick was suitable for anodic bonding. The role of sodium ions for anodic bonding was also investigated by theoretical bonding mechanism and experimental inspection.

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