Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Photo-induced scalar phenomena of As$_{40}Ge_{10}Se_{100-x}S_x$ Thin-Film

As$_{40}Ge_{10}Se_{100-x}S_x$ 계 박막의 광유기 스칼라 현상

  • 박수호 (광운대학교 전자재료공학과, 광운대학교 신기술 연구소) ;
  • 이현용 (광운대학교 전자재료공학과, 광운대학교 신기술 연구소) ;
  • 정홍배 (광운대학교 전자재료공학과, 광운대학교 신기술 연구소)
  • Published : 1996.11.01
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Abstract

As optical massmemories, (Se, S)-based chalcogenide amorphous films are used for a holographic supermicrofiche by using the refractive-index change. In 1000$\AA$thick-As$_{40}$ Ge$_{10}$Se$_{100-x}$S$_{x}$(x=0.25, 35at.%), the amount of refractive index change $\Delta$n reaches 0.01~0.53 at 6328, 7800$\AA$ by exposing for 15minutes plue-pass filtered mercury lamp(~4300$\AA$) and annealing 20$0^{\circ}C$. And in initially annealed As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$, photodarkening(PD) and thermalbleaching(TB) was founded.ded.B) was founded.d.

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