Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1996.11a
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- Pages.26-28
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- 1996
Fabrication of the Hihg Power SiGe Heterojunction Bipolar Transistors using APCVD
상압 화학 기상 증착기를 이용한 고출력 SiGe HBT제작
Abstract
A high power SiGe HBT has been fabricated using APCVD(Atmospheric Pressure Chemical Vapor Deposition) and its perfermanoe has been analysed. The composition of Ge in the SiGe base was graded from 0% at the emitter-base junction to 20% at the base-collector junction. As a base electrode, titanium disilicide(TiSi
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