Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on the Chemiresistor Device characteristics of the CuTBP(Copper-tetra -tert-buthylphthalocyanine) LB films

CuTBT(Copper-tetra-tert-buthylphthalocyanine) LB막의 Chemiresistor Device 특성에 관한 연구

  • 이창희 (홍익대학교 전자전기공학부) ;
  • 구자룡 (홍익대학교 전자전기공학부) ;
  • 김태완 (홍익대학교 물리학과) ;
  • 김정수 (홍익대학교 전자전기공학부)
  • Published : 1996.05.01

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Abstract

The NO$_2$ GAS-detection characteristic of CuTBT (Copper-tetra-tert-butylphtha1ocyanine) LB films were investigated through a study of current-voltage (I-V) characteristics with a variation of number N of interdigital electrodes (N=1∼25). A concentration of 200ppm NO$_2$ gas was used. It was found that a conductance G increases monotonically as the number of interdigital electrode increases, and a sensitivity $\Delta$G ($\Delta$G=G$\_$gas//G$\_$air/) is at least higher than 50 and stable. As far as a sensitivity is concerned, the sensitivity when N=26 is greater than that when N=1 by 70 or so. It indicates that the number of interdigital electrodes affects the currents, sensitivity and stability.

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