Dielectric Characteristic by Phase Transition of Fabricated PVDF thin film through Vapor Deposition Method

진공증착법에 의해 제조된 PVDF 박막의 상변화에 따른 유전특성

  • Published : 1996.05.01

Abstract

Polyvinylidene fluoride(PVDF) thin films are fabricated by vapor deposition method and their dielectric characteristics are investigated. At electric field near 4MV/m, a phase transition occur with polar ${\alpha}$ . In accordance to increasing temperature, the dielectric relaxation of PVOF thin films show from 70Hz to 104Hz. This result correspond to Debye's theory[1]. Activation energy of PVDP thin film is 21Kca1/mo1.

Keywords