Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1996.11a
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- Pages.93-96
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- 1996
A Study of Three Dimensional Ion Implantation Simulator
3차원 이온 주입 시뮬레이터 개발에 관한 연구
Abstract
We developed three dimensional Monte carlo ion implantation simulator which simulate distributions of impurities under the ion implantation on the tilted multi-layered layer. Our simulation reveals three dimensional shadow effect and sidewall scattering effect due to the geometrical shapes. For the evaluation of the developed three dimensional Monte carlo ion implantation simulator, calculations with 100,000 ions have been performed for the island and hole structures with a thin oxide of 100
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