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Stress Measurement of films using surface micromachined test structures

  • 이창승 (한국전자통신연구소 반도체연구단) ;
  • 정회환 (한국전자통신연구소 반도체연구) ;
  • 노광수 (한국과학기술원 재료공학) ;
  • 이종현 (한국전자통신연구소 반도체연구) ;
  • 유형준 (한국전자통신연구소 반도체연구단)
  • 발행 : 1996.11.01

초록

The microfabricated test structures were used in order to evaluate the stress characteristics in films. The test structures were fabricated using surface micromachining technique, including HF vapor phase etching as an effective release method. The fabricated structures were micro strain gauge, cantilever-type vernier gauge and bridge for stress measurement, and cantilever for stress gradient measurement. The strain was measures by observing the deformation of the structures occurred after release etching and the amount of deformation can be detected by micro vernier gauge, which has gauge resolution of 0.2${\mu}{\textrm}{m}$. The detection principles and the degree of precision for the measured strain were also discussed. The characteristics of residual stress in LPCVD polysilicon films were studied using these test structures. The stress gradient due to the stress variation through the film thickness was calculated by measuring the deflection at the cantilever free end.

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