측온저항체 온도센서용 백금 박막의 형성에 관한 연구

The Study on Fabrication of Platinum Thin Films for RTD

  • 노상수 (동서대학교 전자기계공학부) ;
  • 최영규 (동서대학교 전자기계공학부) ;
  • 정귀상 (동서대학교 전자기계공학부)
  • Noh, Sang-Soo (Division of Electrical and Machenical Engineering Dongseo University) ;
  • Choi, Young-Kyu (Division of Electrical and Machenical Engineering Dongseo University) ;
  • Chung, Gwiy-Sang (Division of Electrical and Machenical Engineering Dongseo University)
  • 발행 : 1996.11.16

초록

Platinum thin films were deposited on Si-wafer by DC magnetron sputtering for RTD (Resistance Thermometer Devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The Resistivity and Sheet Resistivity were decreased with increasing the temperature of substrate and the annealing time at $1000^{\circ}C$. At substrate temperature $300^{\circ}C$, input power 7(w/$cm^2$), working vacuum 5mtorr and annealing conditions $1000^{\circ}C$, 240min we obtained $10.65{\mu}{\Omega}{\cdot}cm$, Resistivity of Pt thin film and $3000{\sim}3900ppm/^{\circ}C$, TCR(temperature coefficient of resistance) closed to the bulk value.

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