Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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The Crystallization Properties of $Te_x(Sb_{85}Ge_{15})_{100-x}$ Thin films for High Contrast Ratio and Low Loss Optical Recording

고대비.저손실 광기록을 위한 $Te_x(Sb_{85}Ge_{15})_{100-x}$ 박막의 결정화 특성

  • 김종기 (광운대학교 전자재료공학과) ;
  • 김홍석 (광운대학교 전자재료공학과) ;
  • 이현용 (광운대학교 신기술연구소) ;
  • 정홍배 (광운대학교 전자재료공학과)
  • Published : 1997.07.21
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Abstract

We have investigated the crystallization properties of $Te_x(Sb_{85}Ge_{15})_{100-x}$ (x=0.3, 0.5, 1.0 at.%) thin films as observing the reflectance change, XRD and SEM. The reflectance difference(${\Delta}R$) between amorphous and crystalline phases appears appoximately 20%, in all films, at 780nm(diode laser wavelength). In the case of $Te_{0.5}(Sb_{85}Ge_{15})_{99.5}$ thin film, especially, ${\Delta}R$ is about 30%. Also, amophous-to-crystalline phase change is observed at all films. Therefore, $Te_{0.5}(Sb_{85}Ge_{15})_{99.5}$ thin film can be evaluated as attractive optical recording material with low loss and high contrast ratio.

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