Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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A Study on Partially-Depleted SOI MOSFET with Multi-gate

다중 게이트을 이용한 부분 공핍형 SOI MOSFET 특성에 관한 연구

  • Shin, K.S. (Dept of Electronic Engineering, Seoul City Univ) ;
  • Park, Y.K. (Dept of Electronic Engineering, Seoul City Univ) ;
  • Lee, S.J. (Dept of Electronic Engineering, Seoul City Univ) ;
  • Kim, C.J. (Dept of Electronic Engineering, Seoul City Univ)
  • 신경식 (서울시립대학 전자공학과) ;
  • 박윤권 (서울시립대학 전자공학과) ;
  • 이성준 (서울시립대학 전자공학과) ;
  • 김철주 (서울시립대학 전자공학과)
  • Published : 1997.07.21
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Abstract

In this study, partially-depleted SOI MOSFET with multi-gate was fabricated on p-type SIMOX(Seperation by Implanted Oxygen). As increase the number of its gate, increase the breakdown voltage. But kink effect was not affected by the number of its gate. However, it is known that the asymmetric gate structure reduce kink effect. So if asymmetric multi-gate applied to partially-depleted SOI MOSFET, it is expected that the breakdown voltage of SOI MOSET with asymmetric multi-gate is higher than that of SOI MOSFET with single gate and that kink effect is reduced by SOI MOSFET with asymmetric multi-gate.

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