Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1997.07d
- /
- Pages.1411-1413
- /
- 1997
The Property Change of ITO Prepared by Reactive R.F. Sputtering in POP manufacturing Process
반응성 스퍼트링으로 형성된 ITO의 유전채 소성에 따른 특성변화
- Nam, Sang-Ok (Pusan National University Electrical Eng.) ;
- Chi, Sung-Won (Pusan National University Electrical Eng.) ;
- Sohn, Je-Bong (Pusan National University Electrical Eng.) ;
- Huh, Keun-Do (LG Cable & Machinery) ;
-
Cho, Jung-Soo
(Pusan National University Electrical Eng.)
;
-
Park, Chung-Hoo
(Pusan National University Electrical Eng.)
- 남상옥 (부산대학교 전기공학과) ;
- 지성원 (부산대학교 전기공학과) ;
- 손제봉 (부산대학교 전기공학과) ;
- 허근도 (LG전선(주)) ;
-
조정수
(부산대학교 전기공학과)
;
-
박정후
(부산대학교 전기공학과)
- Published : 1997.07.21
Abstract
The thin film that is electrically conductive and optically transparent is called conductive transparent thin film. ITO(Indium-Tin Oxide) which is a kind of conductive transparent thin film has been widely used in solar cell, transparent electrical heater, selective optical filter, FDP(Flat Display Panel) such as LCD (Liquid Crystal Display), PDP(Plasma Display Panel) and so on. Especially in PDP, ITO films is used as a transparent electrode in order to maintain discharge and decrease consumption power through the improvement of cell structure. In this study, we prepared ITO by reactive r.f. sputtering with indium-tin(Sn wt 10%) alloy target instead of indium-tin oxide target. The ITO films deposited at low temperature
Keywords