The Properties Characterization of ZnO Thin Film Grown by RF Sputtering

RF스퍼터링법으로 제작한 ZnO박막의 특성평가

ZnO shows the properties of wide conductivity variation, high optical transmittance, and excellent piezoelectricity. Using these properties of ZnO, the material applications were extended to sensors, SAW filters, solar cells, and display devices. This paper investigated transmittance influencing factors for thin film ZnO grown by RF magnetron sputtering. The growth rate and structural investigation were carried out in conjunction with optical transmittance characteristics of thin film ZnO. The glass substrate temperature of $175^{\circ}C$ exhibited a preferential crystallization along (002) orientation. Transmittance of ZnO film deposited at the substrate temperature of $175^{\circ}C$ showed higher than 92%. An active sputter gas was investigated with a variation of $O_2$ partial pressure from 0 to 10% in an Ar atmosphere. ZnO film grown in 100% Ar gas shows that a reduced transmittance of 82% at the short wavelengths and decreased resistivity value. As the partial pressure of $O_2$ gas increased, the optical transmittance was increased above 90% at the short wavelengths, however, resistivity was drastically increased to higher than $10^4{\Omega}$-cm.