Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Breakdown Voltage Characterization of SOI RESURF Diode Using SIPOS

SIPOS를 이용한 SOI RESURF 다이오드의 항복전압 특성

  • Shin, Dong-Goo (School of Electrical and Electronics Engineering, Ajou Univ) ;
  • Han, Seung-Youp (School of Electrical and Electronics Engineering, Ajou Univ) ;
  • Choi, Yearn-Ik (School of Electrical and Electronics Engineering, Ajou Univ) ;
  • Chung, Sang-Koo (School of Electrical and Electronics Engineering, Ajou Univ)
  • 신동구 (아주대학교 전기전자 공학부) ;
  • 한승엽 (아주대학교 전기전자 공학부) ;
  • 최연익 (아주대학교 전기전자 공학부) ;
  • 정상구 (아주대학교 전기전자 공학부)
  • Published : 1997.07.21
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Abstract

The breakdown voltage of SOI RESURF (REduce SURface Field) diode using a SIPOS (Semi Insulating POlycrystalline Silicon) layer is verified in terms of n-drift layer length and surface oxide thickness by device simulator MEDICI, and compared with conventional SOI RESURF diode. Increasing the n-drift layer length, the breakdown voltage of SOI RESURF diode using the SIPOS layer have increased and saturated at $8{\mu}m$. And it has decreased with increasing the surface oxide thickness.

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