Proceedings of the Korea Association of Crystal Growth Conference (한국결정성장학회:학술대회논문집)

The Korea Association of Crystal Growth (한국결정성장학회)
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Characterization of SiC/C Functionally Gradient Materials Growth Process by CVD Technique

  • Park, Chinho (Yeungnam University, School of Chemical Engineering & Technology) ;
  • Lee, Jinwook (Yeungnam University, School of Chemical Engineering & Technology) ;
  • Jung, Soon-Deuk (Hanyang University, Department of Chemical Engineering) ;
  • Yi, Sung-Chul (Hanyang University, Department of Chemical Engineering) ;
  • Kim, Yootaek (Kyonggi University, Department of Materials Science & Engineering)
  • Published : 1997.06.01
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Abstract

SiC/C functionally gradient material (FGMs) were formed on graphite substrates by hot-wall chemical vapor deposition (CVD) technique using the SiCl$_4$-C$_3$H8-H$_2$ chemistry. Thermochemical equilibrium calculations were carried out to investigate the deposition process. The effect of process variables on the deposition yield and the SiC/C ratio in deposited layers was studied in detail. Calculated results showed a reasonable agreement with the experiment in a qualitative sense. SiC/C FGMs with excellent mechanical and thermal properties could be successfully formed on graphite substrates by carefully controlling the compositions in the deposited layers.

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