Proceedings of the Korea Association of Crystal Growth Conference (한국결정성장학회:학술대회논문집)

The Korea Association of Crystal Growth (한국결정성장학회)
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Optical Dark Field Imaging for Characterization of Semiconductors

  • Ogawa, Tomoya (Department of Physics, Gakushin University) ;
  • Kissinger, Gudrun (Institute for Semiconductor Physics, Frankfurt (Order), Germany) ;
  • Sakai, Kazufumi (Department of Math. & Phys., The National Defence Academy, Yokosuka City, 239, Japan)
  • Published : 1997.06.01
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Abstract

The principle of dark field imaging is comprehensively discussed using real images of dislocations, stacking faults and gettering phenomena due to defects obtained by Cz Si wafers and LEC semi-insulating GaAs crystals. Resulution of dark field imaging is improved by Fourier transformation of Fraunhofer diffraction pattern obtained at an out-of focusing position of an objective lens.

Keywords