Investigations of Pd Based hybrid ohmic contacts to high-low doped n-type GaAs

  • Baik, Hong-Koo (School of Materials Science and Engineering, Yonsei University) ;
  • Kwak, Joon-Seop (School of Materials Science and Engineering, Yonsei University)
  • Published : 1997.06.01

Abstract

To improve electrical properties and uniformity of high-low doped n-type GaAs, new ohmic contacts with a low-resistance and the superior uniformity was developed using a concept of hybrid ohmic contact. The hybrid ohmic contact displayed good surface and interface morphology and had minimum contact resistivity of 3${\times}$10-6 $\Omega$$\textrm{cm}^2$ in a wide annealing temperature ranged from 340$^{\circ}C$ to 420$^{\circ}C$, which was much wider than that of conventional ohmic contacts. The microstructural analysis showed that the Pd/Ge ohmic contact at low annealing temperature (∼300$^{\circ}C$) and also annealing temperature (∼400$^{\circ}C$), resulting ij hybrid ohmic contacts.

Keywords