Proceedings of the Korea Association of Crystal Growth Conference (한국결정성장학회:학술대회논문집)
- 1997.06a
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- Pages.269-274
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- 1997
A Study for the Homoepitaxial Growth of Single-crystalline 6H-SiCs.
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Jang, Seong-Joo
(Department of Physics, Dongshin University)
;
- Seol, Woon-Hag (Department of Physics, Dongshin University) ;
- Jeong, Moon-Taek (Department of Physics, Dongshin University)
- Published : 1997.06.01
Abstract
Silicon carbide(SiC) epilayers were grown by a thermal CVD(chemical vapor deposition) process, and their crystalline properties were investigated. Especially, the growth conditions of 6H-Sic homoepitaxial layers were obtained using a SiC-uncoated graphite susceptor that utilized Mo-plates. In order to investigate the crystallinity of grown layers, Nomarski photograph, transmittance, XRD, Raman, PL and TEM measurements were used. The best quality of 6H-SiC epilayers was obtained in conditions of growth temperature 1500
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