활성질소원이 저온 GaN 박막성장에 미치는 영향에 관한 연구

We repport the effects of active nitrogens on the low-tempperature growth of GaN by a remote pplasma-enhanced metal-organic chemical vappor depposition method. the emission intensities of active nitrogens increase with fr ppower and nitrogen flow rate, but decrease with total reactor ppressure. Low-tempperature growth of GaN are greatly affected by the concentrations of active nitrogens and its concentrations are closely related with the emission intensities.