The Effect of Titanium Silicide on AuTi/GaN Ohmic Contact System

  • Kim, Cha-Yeon (LG Corpporate Institute of Technology, 16 Woomyeon-Dong, Seocho-Gu, 137-140 Seoul) ;
  • Kim, Sung-Woo (LG Corpporate Institute of Technology, 16 Woomyeon-Dong, Seocho-Gu, 137-140 Seoul) ;
  • Kim, Bea-Yong (LG Corpporate Institute of Technology, 16 Woomyeon-Dong, Seocho-Gu, 137-140 Seoul) ;
  • Choi, Yoon-Ho (LG Corpporate Institute of Technology, 16 Woomyeon-Dong, Seocho-Gu, 137-140 Seoul) ;
  • Hong, Chang-Hee (LG Corpporate Institute of Technology, 16 Woomyeon-Dong, Seocho-Gu, 137-140 Seoul) ;
  • Kim, Dae-Woo (Yonsei University Deppartment of Metallugy) ;
  • Baik, Hong-Koo (Yonsei University Deppartment of Metallugy) ;
  • Chung, Nam-Whang (Yonsei University Deppartment of Physics)
  • Published : 1997.07.01