한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

MOCVD를 이용한 GaAs/Si태양전지의 제작과 특성에 관한 연구

A Study on Fabrication and Properties the GaAs/Si Solar Cell using MOCVD

  • 신일철 (동신대학교 대학원 전기전자공학과) ;
  • 임중열 (동신대학교 대학원 전기전자공학과) ;
  • 차인수 (동신대학교 공대 전기전자공학과)
  • 발행 : 1997.04.01
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초록

The goals of the present study lie in presenting the direction of researches and developments for GaAs based solar cells, as well as in taking a step toward the establishment of GaAs MOCVD technologies. On the other hand, the GaAs on Si substrates has been recognized as a lightweight alternative to pure GaAs substrate for space application, because its density is less than the 7alf of GaAs or Ge. So, GaAs/Si has twofold weight advantage to GaAs monolithic cell. It was concluded that the development the development of MOCVD technologies should be ahead of GaAs solar cells.

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