한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

Ga과 NH$_3$의 직접반응에 의한 GaN의 성장

Growth of GaN by Reaction of Ga and NH$_3$

  • 이영주 (대전산업대학교 재료공학과) ;
  • 김진용 (대전산업대학교 재료공학과) ;
  • 권영란 (대전산업대학교 재료공학과) ;
  • 김선태 (대전산업대학교 재료공학과)
  • 발행 : 1997.04.01
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초록

GaN crystals were deposited by tile direct reaction between ammonia and gallium at 105$0^{\circ}C$, 107$0^{\circ}C$ and 110$0^{\circ}C$ on (0001) plane sapphire substrate. The size of GaN crystals were increased with reaction temperature, but its were decreased with increasing the flow rates of NH$_3$. The size of GaN of 46${\mu}{\textrm}{m}$ were deposited ell sapphire substrate at the reaction temperature of 107$0^{\circ}C$ for growth time of 60 min.

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