한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

RF Sputtering법에 의한 BaTiO$_3$세라믹스 박막의 전기적 특성

The Electrical Properties of BaTiO$_3$Ceramics Thin Films by RF Sputtering Technique

  • 이문기 (광운대학교 전자재료공학과) ;
  • 류기원 (여주전문대학 전자과) ;
  • 배선기 (인천대학교 전기공학과) ;
  • 이영희 (광운대학교 전자재료공학과)
  • 발행 : 1997.04.01
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

BaTiO$_3$thin film capacitor were prepared on Pt(100)/SiO$_2$/Si(100)wafer by RF sputtering technique. Dielectric and electrical characteristics of the thin film capacitor are investigated. The Dielectric constant and loss were about 683 and 5[%], respectively. We found that the leakage current of thin film capacitor is depend on RF power during deposition. Because of increase of activation energy, leakage current inclosed at high RF power and sheet resistivity of the films was decreased. Swithching voltage of thin film capacitor was 4.4[V]

키워드