Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on the TDDB Characteristics of Superthin ONO structure

초박막 GNO 구조의 TDDB 특성에 관한 연구

  • 국삼경 (광운대학교, 전자재료공학과) ;
  • 윤성필 (광운대학교, 전자재료공학과) ;
  • 이상은 (광운대학교, 전자재료공학과) ;
  • 김선주 (광운대학교, 전자재료공학과) ;
  • 서광열 (광운대학교, 전자재료공학과)
  • Published : 1997.11.01
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Abstract

Capacitor-type MONOS (metal-oxide-nitride-oxide- semiconductor) NVSMs with 23$\AA$ tunneling oxide and 40$\AA$ blocking oxide were fabricated. The thicknesses of nitride layer were 45$\AA$, 91$\AA$ and 223$\AA$, Breakdown characteristics of MONOS devices were measured to investigate the reliability of superthin ONO structure using ramp voltage and constant voltage method. Reducing the nitride thickness will significantly increase the reliablity of MONOS NVSM.

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