Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1997.11a
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- Pages.52-55
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- 1997
Raman spectroscopy of PLZT thin films prepared by Sol-Gel processing
Sol-Gel법으로 제작된 PLZT박막의 Raman 연구
Abstract
In this study, PLZT stock solutions were prepared by sol-gel processing to fabricate PLZT thin films. The stock solutions were spin-coated on ITO-glass and the film were annealed by rapid thermal annealing(RTA). The variation of tile crystallographic structure of the thin films and the phase transition with respect to it were observed using Raman spectra. Raman result showed that the band of spectra are broad as the amount of Zr substitution increased and specially, abrupt change occurs in the raman spectra upon crossing the tetragonal-rhombohedral phase boundry at 2/55/45 PLZT thin film. So, the fact that the crystallographic structure was transitted from tetragonal to rhombohedral structure was certified.
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