Raman spectroscopy of PLZT thin films prepared by Sol-Gel processing

Sol-Gel법으로 제작된 PLZT박막의 Raman 연구

  • 방선웅 (연세대학교 전기공학과) ;
  • 장낙원 (연세대학교 전기공학과) ;
  • 박정흠 (연세대학교 전기공학과) ;
  • 마석범 (연세대학교 전기공학과) ;
  • 박창엽 (연세대학교 전기공학과) ;
  • 최형욱 (경원대학교 전기전자공학부)
  • Published : 1997.11.01

Abstract

In this study, PLZT stock solutions were prepared by sol-gel processing to fabricate PLZT thin films. The stock solutions were spin-coated on ITO-glass and the film were annealed by rapid thermal annealing(RTA). The variation of tile crystallographic structure of the thin films and the phase transition with respect to it were observed using Raman spectra. Raman result showed that the band of spectra are broad as the amount of Zr substitution increased and specially, abrupt change occurs in the raman spectra upon crossing the tetragonal-rhombohedral phase boundry at 2/55/45 PLZT thin film. So, the fact that the crystallographic structure was transitted from tetragonal to rhombohedral structure was certified.

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