Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Sheet Resistance Properties of Tungsten Nitride Thin films for Intergrated Circuit

IC소자용 질화 텅스텐 박막의 면저항 특성

  • 이우선 (조선대학교 전기공학과) ;
  • 정용호 (서강전문대 열냉동과) ;
  • 김남오 (조선대학교 전기공학과) ;
  • 정종상 (조선대학교 전기공학과) ;
  • 유병수 (조선대학교 전기공학과)
  • Published : 1997.11.01
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Abstract

We investigated the sheet resistance properties of tungsten nitride thin films deposited by RF and DC sputtering system. It deposited at various conditions that determine the sheet resistance. The properties of the sheet resistance of these films were measured under various conditions. Sheet resistance analysed under the flow rate of the argon gas and contents of nitrogen from nitrogen-argon gas mixtures. We found that these sheet resistance were largely depend on the temperature of substrate, gas flow rate and RF power. Very high and low sheet resistance of tungsten films obtained by DC sputtering. As the increase of contents of nitrogen gas obtained from nitrogen-argon gas mixture, tungsten nitride thin films deposited by the reactive DC sputtering and the sheet resistance of these films were increased.

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