Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1997.11a
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- Pages.529-532
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- 1997
A study of crystallization of a-Si:H using a-Si:H/Cd interface layer
A-Si:H/Cd 계면층을 이용한 a-Si:H의 결정화 연구
Abstract
We studied the crystallization of a-Si:H thin film. Multi-crystallized Si films are preferred in many applications such as FPD, solar cells, RAM, and integrated circuits. Because most of these applications require a low temperature process, we investigated a crystallization of a-Si:H using a Cd layer. A metal Cd shows an eutectic point at a temperature of 321
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