Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on the properties of ELD of Mu1tistructure Using by Alq$_3$

Alq$_3$를 이용한 다층 구조의 ELD 특성 연군

  • 채수길 (홍익대학교 전기제어공학과) ;
  • 김태완 (홍익대학교 물리학과) ;
  • 강도열 (홍익대학교 전기제어공학과)
  • Published : 1997.11.01
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Abstract

In this paper A double-layer organic electroluminescent(EL) device was fabricated using a TPD(N,N'-dipheny] -N,N'-bis(3-methylphenyl)-[1,1'-biphenyl]-4.4'-diamine: aromatic diamine), as a hole-transport material and tris (8-hydroxy quinolinate) aluminum(Alq$_3$) as a an emiting material and its performance characteristics were investigated. structure of devices is ITO/TPD/Alq$_3$/Al. we have fabricated hole transport layer of two types. Doping material of Hole Transport material is Poly(methyl methacrylate)(PMMA) and PEI(Poly-Ether-Imide). Carrier injection from the electrodes to the doped PMMA and PEI layer through the dopants and concomitant electroluminescence from Alq$_3$were observed. Green emission with luminance of 40cd/m$^2$was achieved at a drive voltage of 30V

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