Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1997.11a
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- Pages.173-176
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- 1997
Characteristics of InN thin films fabricated by reactive sputtering
반응성 스퍼터링에 의해 제작된 InN 박막의 특성
Abstract
The III-V nitride semiconductor InN thin films which have the direct bandgap in visible light wavelength region have been deposited on Si(100) substrates and AIN/Si(100) substrates by rf reactive sputtering. InN thin films have been investigated on the structural, and electrical properties according to the sputtering parameters such as total pressure, rf power, and substrate temperature. It is found that optimal conditions required for fabricating InN thin films with high crystal Quality, low carrier concentration, high Hall mobility are total pressure 5mTorr, rf power 60W, substrate temperature 6
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