A Study on the Hot-Carrier Effects of p-channel poly-Si TFT

p-채널 po1y-Si TFT 소자의 Hot-Carrier효과에 관한 연구

  • 진교원 (수원대학교 전자재료공학과) ;
  • 박태성 (수원대학교 전자재료공학과) ;
  • 이제혁 (수원대학교 전자재료공학과) ;
  • 백희원 (수원대학교 전자재료공학과) ;
  • 변문기 (수원대학교 전자재료공학과) ;
  • 김영호 (수원대학교 전자재료공학과)
  • Published : 1997.11.01

Abstract

Hot carrier effects as a function of bias stress time and bias stress conditions were syste-matica1ly investigated in p-channel po1y-Si TFT's fabricated on the quartz substrate. The device degradation was observed for the negative bias stress. After positive bias stressing, Improvement of electrical characteristic except for subthreshold slope was observed. It was found that these results were related to the hot carrier injection into the gate oxide and interface states at the poly-Si/SiO$_2$interface rather than defects states generation under bias stress.

Keywords