Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1997.11a
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- Pages.266-269
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- 1997
A Study on the Hot-Carrier Effects of p-channel poly-Si TFT
p-채널 po1y-Si TFT 소자의 Hot-Carrier효과에 관한 연구
Abstract
Hot carrier effects as a function of bias stress time and bias stress conditions were syste-matica1ly investigated in p-channel po1y-Si TFT's fabricated on the quartz substrate. The device degradation was observed for the negative bias stress. After positive bias stressing, Improvement of electrical characteristic except for subthreshold slope was observed. It was found that these results were related to the hot carrier injection into the gate oxide and interface states at the poly-Si/SiO
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