Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

Synthesis of Diamond thin films by RF Plasma CVD

RF Plasma CVD에 의한 다이아몬드 박막의 합성

  • 이상희 (인하대학교 전기공학과) ;
  • 이병수 (인하대학교 전기공학과) ;
  • 이덕출 (인하대학교 전기공학과) ;
  • 김영봉 (인하공업전문대학 전기과) ;
  • 김보열 (인하공업전문대학 전기과) ;
  • 이종태 (인하공업전문대학 전기과) ;
  • 우호환 (인하공업전문대학 전기과)
  • Published : 1997.11.01
Download PDF
⟨ Previous Next ⟩

Abstract

Diamond thin films were deposited on Si wafer from a mixture of CE$_4$ and H$_2$ by RF Plasma CVD. The films were de77sited under the following conditions : discharge power of 500w, H$_2$ flow rate of 30sccm, chanter pressure of 20∼50Torr, and CH$_4$ concentration of 0.5∼2%. The deposition time was 30∼40 hours because of low growth rate. The deposited films were characterized by Scanning Electron Microscopy and X-ray Diffraction method.

Keywords