절전형 ZnO-Si계 CO 가스 센서 제작과 그 특성

A properties and the fabrication of ZnO-Si system CO gas sensor with low power consumption

  • 이승환 (고려대학교 전기공학과) ;
  • 홍형기 (고려대학교 전기공학과) ;
  • 김종관 (고려대학교 전기공학과) ;
  • 장병호 (고려대학교 전기공학과) ;
  • 성영권 (고려대학교 전기공학과)
  • Yi, S.H. (Dept., of Electrical Eng., KOREA Univ.) ;
  • Hung, H.K. (Dept., of Electrical Eng., KOREA Univ.) ;
  • Kim, J.K. (Dept., of Electrical Eng., KOREA Univ.) ;
  • Chang, B.H. (Dept., of Electrical Eng., KOREA Univ.) ;
  • Sung, Y.K. (Dept., of Electrical Eng., KOREA Univ.)
  • 발행 : 1997.11.29

초록

Low power ZnO-Si gas sensor below 500 mW at operating temperature has been fabricated by using micromachining technique. I-V measurement shows the power consumption of 260 mW at $400^{\circ}C$ The sensitivity of the sensor was 45 percent at operating temperature of $350^{\circ}C$(230 mW) with 1,000 ppm CO gas atmosphere. The response and the recovery time found out to be 94 sec and 180 sec, respectively, when CO gas was used. In order to measure the exact temperature of the gas sensing layer, Pt/Cr bilayer-RTD was used in this experiment.

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