Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

Fabrication and electrical characteristic analysis of poly-Si TFT with lateral body

측면 기판 단자를 갖는 다결정 실리콘 박막 트랜지스터의 제작과 전기적 특성 분석

  • Choi, H.B. (School of electrical engineering of Seoul National University) ;
  • Yoo, J.S. (School of electrical engineering of Seoul National University) ;
  • Kim, C.H. (School of electrical engineering of Seoul National University) ;
  • Han, M.K. (School of electrical engineering of Seoul National University)
  • Published : 1998.07.20
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Abstract

Poly-Si TFT(Thin Film Transistor) is a electronic device that can be applied to the field of large area electronics such as AMLCD. We have fabricated the poly-Si TFT with lateral body terminal that is counter-doped body electrode and investigated the electrical characteristics of it. The lateral body terminal being short with s terminal, we have measured the transfer charac (Vg-ld) and the output characteristic (Vd-ld) fabricated devices. The measured result showe only that leakage current in OFF-state was re and Kink effect in ON-state was suppressed bu that in output characteristic curve the output Id was sustained constantly with the output v Vd in the saturation region.

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