대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)

대한전자공학회 (The Institute of Electronics and Information Engineers)
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이중 $\delta$ 도핑 채널 MESFET의 특성향상

Performance Improvement of Double $\delta$-doped Channel MESFET's

  • 이관흠 (숭실대학교 전자공학과) ;
  • 이찬호 (숭실대학교 전자공학과)
  • 발행 : 1998.10.01
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초록

A MESFET device with double $\delta-doped$ channel is designed and investigated by computer simulation. The device with optimized design parameters such as a doping ratio and a spacer thickness, shows superior performance to conventional MESFETs. The effects of the FWHM of $\delta-doped$ layers device characteristics are investigated to account for the thermal process

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