Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

″High frequency and high speed microelectronics based on the $A_{3}B_{5}$- semiconductor compounds in the republics of the former USSR. Present state and prospects for future″

  • Mokerov, V.G. (Institute of Radio Engineering and Electronics of RAS, Moscow, Russia) ;
  • Matveev, Yu.A. (Scientific Research Institute ″Pulsar″, Moscow, Russia) ;
  • Temnov, A.M. (State Research and Production Corporation ″Istok″, Moscow Region, Russia) ;
  • Kitaev, M.A. (Scientific Research Institute ″Salut″, Nijnii Novgorod, Russia)
  • Published : 1998.06.01
Download PDF
⟨ Previous Next ⟩

Abstract

Present paper is devoted to the brief analysis of the present state and the prospects for the future of technology of the high frequency devices and high speed integrated circuits based on the $A_{3}B_{5}$ semiconductor compounds, including the $A_{3}B_{5}$-heterostructures, in the republics of the former USSR. tunneling quantum well-structures were widely used.

Keywords