THICKNESS DEPENDENCE OF CAPPING BARRIER TIO2 ON THE HYDROGEN RELATED DEGRADATION OF PT/PZT/PT FERROELECTRIC CAPACITOR IN DOUBLE LEVEL METALLIZATION FRAM

Lee, S.Y. (Technology Development 3 Team, Semiconductor R & D Center, Samsung Electronics, Co.) ;
Koo, K.N. (Technology Development 3 Team, Semiconductor R & D Center, Samsung Electronics, Co.) ;
Jung, D.J. (Technology Development 3 Team, Semiconductor R & D Center, Samsung Electronics, Co.) ;
Kim, B.H (Technology Development 3 Team, Semiconductor R & D Center, Samsung Electronics, Co.) ;
Park, S.O. (Technology Development 3 Team, Semiconductor R & D Center, Samsung Electronics, Co.) ;
Kim, K.N. (Technology Development 3 Team, Semiconductor R & D Center, Samsung Electronics, Co.)