Proceedings of the Materials Research Society of Korea Conference (한국재료학회:학술대회논문집)
- 1998.08a
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- Pages.109.1-109
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- 1998
EFFECTS OF ${BF_2}^+$ -IMPLANTATION ON THE STRAIN-RELAXATION AND CURRENT LEAKAGE IN N-TYPE $Ge_{0.06}Si_{0.94}$ LAYERS ON Si(100)
- Oh, M.S. (Department of Metallurgical Engineering, Yonsei University) ;
- Joo, M.H. (Department of Metallurgical Engineering, Yonsei University) ;
- Im. S. (Department of Metallurgical Engineering, Yonsei University) ;
- Kim, H.B. (Dept. of Physics & Atomic-scale Surface Science Research Center Yonsei Univ.) ;
- Song, J.H. (Advanced Analysis Center, Korea Institute of Science and Technology) ;
- Kim, H.K. (Surface Analysis Group, Korea Research Institute of Standards and Scienc, Taedoc Science Town)
- Published : 1998.08.01
Abstract
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