Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1998.11a
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- Pages.1-4
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- 1998
Improvement of Thin-Gate Oxide using Nitridation and Reoxidation
질화와 재산화를 이용한 얇은 게이트 산화막의 질적 향상
Abstract
In this paper, we have studied a variation of I-V characteristics, and time-dependent dielectric breakdown(TDDB) of thin layer NO and ONO film depending on nitridation and reoxidation time, respectively, and measured a variation of leakage current and charge-to-breakdown(Q
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